sod - 723 absolute maximum ratings (ta = 25c) parameter symbol limits unit peak reverse voltage v rm 90 v dc reverse voltage v r 80 v peak forward current i fm 225 ma mean rectifying current i o 100 ma surge current (1s) i surge 500 ma junction temperature tj 125 c storage temperature t stg C 55 ~ +125 c switching diode ? applications high speed switching ? features 1) extremely small surface mounting type. 2) high speed. 3) high reliability. ? construction silicon epitaxial planar electrical characteristics (ta = 25c) parameter symbol min. typ. max. unit conditions forward voltage v f C C 1.2 v i f =100ma reverse current i r C C 0.1 av r =80v capacitance between terminals c t C 0.72 3.0 pf v r =0.5v , f=1mhz reverse recovery time t rr C C 4 ns v r =6v ,i f =10ma , r l =100 device marking ? 1SS400G = 3 r u ? 2012-10 willas electronic corp. 6 6 * .037(0.95) .042(1.05) .026(0.65) .021(0.55) .007(0.18) .003(0.08) .057(1.45) .053(1.35) .006(0.15)min. .022(0.55) .017(0.45) .013(0.32) .009(0.25) dimensions in inches and (millimeters)
1 100m 10m 1m 100 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 forward vol tage : v f (v) fig.1 forward characteristics 10 5 2 1 0.5 0.2 0.1 electrical characteristic curves (ta = 25c) forward current : i f (a) 1m 0.1m 10 1 100n 10n 1n 0 20 40 60 80 100 120 reverse voltage : v r (v) fig.3 capacitance between terminals reverse voltage : v r (v) fig.2 reverse characteristics reverse current : i r (a) 02 4 6 81 01214 3 2 1 0 0.1 1 10 100 1000 10,000 capacitance between terminals : c t (pf) reverse recovery time : t rr (ns) forward current : i f (ma) fig.4 reverse recovery time characteristics 100 50 20 10 5 2 1 01 02 03 0 surge current : i surge (a) pulse width : t w (ms) fig.5 surge current characteristics pulse generator output 50 ? sampling oscilloscope 50 ? fig.6 reverse recovery time (t rr ) measurement circuit 5k ? 0.01 f d.u.t. 2012-10 willas electronic corp. 6 6 *
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